Crystal quality and conductivity type of epitaxial (002) ZnO films on (100) Si substrates for device applications

Sardari, SE; Iliadis, AA; Stamataki, M; Tsamakis, D; Konofaos, N

dc.contributor.author	Sardari, SE	en
dc.contributor.author	Iliadis, AA	en
dc.contributor.author	Stamataki, M	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Konofaos, N	en
dc.date.accessioned	2014-03-01T02:46:06Z
dc.date.available	2014-03-01T02:46:06Z
dc.date.issued	2009	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32539
dc.subject	Band Gap	en
dc.subject	Binding Energy	en
dc.subject	epitaxial growth	en
dc.subject	Solar Cell	en
dc.subject	Thermal Expansion Coefficient	en
dc.subject	Zinc Oxide	en
dc.title	Crystal quality and conductivity type of epitaxial (002) ZnO films on (100) Si substrates for device applications	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2009.5378112	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2009.5378112	en
heal.identifier.secondary	5378112	en
heal.publicationDate	2009	en
heal.abstract	Zinc oxide is a wide band-gap (3.37eV) semiconductor with high exciton binding energy (60meV) and excellent piezoelectric properties, showing promise for UV lasers, optical detection, sensors, and solar cells. Epitaxial growth of ZnO on Si is challenging due to lattice mismatch and thermal expansion coefficient differences, but it is important to develop such film growth in order to enhance the	en
heal.journalName	2009 International Semiconductor Device Research Symposium, ISDRS '09	en
dc.identifier.doi	10.1109/ISDRS.2009.5378112	en