Electrical characterization of Cr / p-ZnO Schottky contacts grown by pulsed laser deposition (PLD) on Si substrate

Stamataki, M; Tsamakis, D; Ali, HA; Esmaili-Sardari, S; Iliadis, AA

dc.contributor.author	Stamataki, M	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Ali, HA	en
dc.contributor.author	Esmaili-Sardari, S	en
dc.contributor.author	Iliadis, AA	en
dc.date.accessioned	2014-03-01T02:46:08Z
dc.date.available	2014-03-01T02:46:08Z
dc.date.issued	2009	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32565
dc.subject	Band Gap	en
dc.subject	Binding Energy	en
dc.subject	Energy Gap	en
dc.subject	Pulsed Laser Deposition	en
dc.title	Electrical characterization of Cr / p-ZnO Schottky contacts grown by pulsed laser deposition (PLD) on Si substrate	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2009.5378075	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2009.5378075	en
heal.identifier.secondary	5378075	en
heal.publicationDate	2009	en
heal.abstract	ZnO is an attractive wide band gap semiconductor and a promising material for transparent electronic applications such as short-wavelength LEDs, lasers and UV detectors because it can be obtained chemically stable and easily deposited on different semiconductor substrates (Si, InGaAs, GaAs). The use of ZnO in variety of applications is mainly due to its important properties of a direct band	en
heal.journalName	2009 International Semiconductor Device Research Symposium, ISDRS '09	en
dc.identifier.doi	10.1109/ISDRS.2009.5378075	en