A high-level mapping algorithm targeting 3D NoC architectures with multiple Vdd

Siozios, K; Anagnostopoulos, I; Soudris, D

dc.contributor.author	Siozios, K	en
dc.contributor.author	Anagnostopoulos, I	en
dc.contributor.author	Soudris, D	en
dc.date.accessioned	2014-03-01T02:46:36Z
dc.date.available	2014-03-01T02:46:36Z
dc.date.issued	2010	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32747
dc.subject	Energy Saving	en
dc.subject	Low Power	en
dc.subject	Real Time	en
dc.subject.other	Communication problems	en
dc.subject.other	Delay overheads	en
dc.subject.other	Energy saving	en
dc.subject.other	Level mapping	en
dc.subject.other	Low Power	en
dc.subject.other	Multiple VDD	en
dc.subject.other	NoC architectures	en
dc.subject.other	Supply voltages	en
dc.subject.other	Temperature reduction	en
dc.subject.other	Communication	en
dc.subject.other	Conformal mapping	en
dc.subject.other	Energy conservation	en
dc.subject.other	Three dimensional	en
dc.title	A high-level mapping algorithm targeting 3D NoC architectures with multiple Vdd	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISVLSI.2010.98	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISVLSI.2010.98	en
heal.identifier.secondary	5572834	en
heal.publicationDate	2010	en
heal.abstract	The communication problem in modern ICs becomes a challenge Issue. This paper introduces a high-level mapping algorithm targeting to low-power 3D NoC devices. By appropriately assigning application's functionalities to layers with different supply voltages we achieve reasonable energy savings and temperature reduction. Additionally, our methodology supports real-time adaption on different traffic scenarios. Experimental results show that energy savings up to 19% are feasible, without any area and delay overhead, as compared to architectures powered by only one supply voltage. © 2010 IEEE.	en
heal.journalName	Proceedings - IEEE Annual Symposium on VLSI, ISVLSI 2010	en
dc.identifier.doi	10.1109/ISVLSI.2010.98	en
dc.identifier.spage	444	en
dc.identifier.epage	445	en