Probing the electrical properties of the Si nitride/Si interface

Tsonos, C; Kanapitsas, A; Karagounis, A; Stavrakas, I; Triantis, D; Anastasiadis, C; Photopoulos, P; Vamvakas, VE; Pissis, P

dc.contributor.author	Tsonos, C	en
dc.contributor.author	Kanapitsas, A	en
dc.contributor.author	Karagounis, A	en
dc.contributor.author	Stavrakas, I	en
dc.contributor.author	Triantis, D	en
dc.contributor.author	Anastasiadis, C	en
dc.contributor.author	Photopoulos, P	en
dc.contributor.author	Vamvakas, VE	en
dc.contributor.author	Pissis, P	en
dc.date.accessioned	2014-03-01T02:46:57Z
dc.date.available	2014-03-01T02:46:57Z
dc.date.issued	2010	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32953
dc.subject	Dielectric Relaxation	en
dc.subject	Electrical Properties	en
dc.subject	Silicon Nitride	en
dc.subject.other	Conductance measurement	en
dc.subject.other	Depletion layer	en
dc.subject.other	Dielectric behaviour	en
dc.subject.other	Dielectric relaxation spectroscopy	en
dc.subject.other	Electrical property	en
dc.subject.other	MIS structure	en
dc.subject.other	Relaxation mechanism	en
dc.subject.other	Dielectric relaxation	en
dc.subject.other	Microelectronics	en
dc.subject.other	Silicon nitride	en
dc.subject.other	Spectroscopy	en
dc.subject.other	Electric properties	en
dc.title	Probing the electrical properties of the Si nitride/Si interface	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/MIEL.2010.5490441	en
heal.identifier.secondary	http://dx.doi.org/10.1109/MIEL.2010.5490441	en
heal.identifier.secondary	5490441	en
heal.publicationDate	2010	en
heal.abstract	The present publication employs Dielectric Relaxation Spectroscopy for the examination of the relaxation mechanisms in silicon nitride MIS structures. These results are combined with capacitance and conductance measurements in order to give a more complete picture of the dielectric behaviour of silicon nitride. The analysis concludes with a method based on Dielectric Relaxation Spectroscopy for the calculation of the depletion layer width. © 2010 IEEE.	en
heal.journalName	2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings	en
dc.identifier.doi	10.1109/MIEL.2010.5490441	en
dc.identifier.spage	465	en
dc.identifier.epage	468	en