Defect formation and annihilation at Ge-GeO2 interfaces

Tsetseris, L; Pantelides, ST

dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Pantelides, ST	en
dc.date.accessioned	2014-03-01T02:47:19Z
dc.date.available	2014-03-01T02:47:19Z
dc.date.issued	2011	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33075
dc.subject	ab initio	en
dc.subject	Defects	en
dc.subject	Fluorine	en
dc.subject	Germanium	en
dc.subject	Hydrogen	en
dc.subject	Interface	en
dc.subject	Oxygen	en
dc.subject	Silicon	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Ab initio	en
dc.subject.other	Defect complex	en
dc.subject.other	Defect formation	en
dc.subject.other	Electronic systems	en
dc.subject.other	First-principles calculation	en
dc.subject.other	Ge atom	en
dc.subject.other	Interface	en
dc.subject.other	Key factors	en
dc.subject.other	Oxygen atom	en
dc.subject.other	Dangling bonds	en
dc.subject.other	Defects	en
dc.subject.other	Fluorine	en
dc.subject.other	Hydrogen	en
dc.subject.other	Hydrogen bonds	en
dc.subject.other	Oxygen	en
dc.subject.other	Passivation	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Silicon oxides	en
dc.subject.other	Germanium	en
dc.title	Defect formation and annihilation at Ge-GeO2 interfaces	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2010.08.027	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2010.08.027	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	The stability and dynamics of defects at Ge-GeO2 interfaces are key factors for the operation of Ge-based devices. Here we present the results of extensive first-principles calculations on creation mechanisms and transformations of defects at the Ge-GeO2 boundary. We find that, similar to the case of Ge P-b centers, reactions between interfacial divalent Ge atoms and hydrogen or fluorine do not lead to passivation of the Ge dangling bonds. Moreover, the insertion of extra oxygen atoms in the vicinity of P-b and divalent Ge defects can lead to new defect complexes. The results reveal key differences with respect to the traditional Si-SiO2 electronic system. (C) 2010 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2010.08.027	en
dc.identifier.isi	ISI:000288524100018	en
dc.identifier.volume	88	en
dc.identifier.issue	4	en
dc.identifier.spage	395	en
dc.identifier.epage	398	en