Ge volatilization products in high-k gate dielectrics

Golias, E; Tsetseris, L; Dimoulas, A; Pantelides, ST

dc.contributor.author	Golias, E	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Dimoulas, A	en
dc.contributor.author	Pantelides, ST	en
dc.date.accessioned	2014-03-01T02:47:21Z
dc.date.available	2014-03-01T02:47:21Z
dc.date.issued	2011	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33101
dc.subject	Ab initio	en
dc.subject	Defects	en
dc.subject	Germanium	en
dc.subject	Impurities	en
dc.subject	Leakage	en
dc.subject	Traps	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Ab initio	en
dc.subject.other	Carrier traps	en
dc.subject.other	Energy bandgaps	en
dc.subject.other	First-principles	en
dc.subject.other	Gap state	en
dc.subject.other	Gate stacks	en
dc.subject.other	Ge substrates	en
dc.subject.other	High-k gate dielectrics	en
dc.subject.other	High-K gate stacks	en
dc.subject.other	High-k oxides	en
dc.subject.other	High-temperature annealing	en
dc.subject.other	Impurities in	en
dc.subject.other	Leakage	en
dc.subject.other	Quantum-mechanical calculation	en
dc.subject.other	Traps	en
dc.subject.other	Electronic properties	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Germanium	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	Leakage (fluid)	en
dc.subject.other	Leakage currents	en
dc.subject.other	Logic gates	en
dc.subject.other	Gate dielectrics	en
dc.title	Ge volatilization products in high-k gate dielectrics	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2010.07.041	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2010.07.041	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	GeO molecules are often emitted by Ge substrates under high-temperature annealing and, in the case of gate stacks, they diffuse through high-k oxides. Here we use first-principles quantum-mechanical calculations to probe the stability of these impurities in La2O3 and HfO2 and their effect on the electronic properties of the host systems. We find that the GeO species introduce several different levels inside the energy band gaps of La2O3 and HfO2. As a result, the impurities may act as charge carrier traps. Hydrogenation of the GeO defects modifies the position and numbers of gap states, but does not eliminate the carrier trap levels completely. The results suggest a possible role of Ge volatilization in enhancing leakage currents and degradation in high-k gate stacks of Ge-based devices. (C) 2010 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2010.07.041	en
dc.identifier.isi	ISI:000288524100026	en
dc.identifier.volume	88	en
dc.identifier.issue	4	en
dc.identifier.spage	427	en
dc.identifier.epage	430	en