Ge-related impurities in high-k oxides: Carrier traps and interaction with native defects

Golias, E; Tsetseris, L; Dimoulas, A

dc.contributor.author	Golias, E	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Dimoulas, A	en
dc.date.accessioned	2014-03-01T02:47:21Z
dc.date.available	2014-03-01T02:47:21Z
dc.date.issued	2011	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33102
dc.subject	Ab initio	en
dc.subject	Defects	en
dc.subject	Germanium	en
dc.subject	High-k	en
dc.subject	Impurities	en
dc.subject	Leakage	en
dc.subject	Traps	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Ab initio	en
dc.subject.other	Atomic-scale mechanisms	en
dc.subject.other	Carrier traps	en
dc.subject.other	Density-functional theory calculations	en
dc.subject.other	Electronic systems	en
dc.subject.other	Energy bandgaps	en
dc.subject.other	Gate leakages	en
dc.subject.other	Ge atom	en
dc.subject.other	Ge substrates	en
dc.subject.other	High-k	en
dc.subject.other	High-k oxides	en
dc.subject.other	Impurities in	en
dc.subject.other	Native defect	en
dc.subject.other	Traps	en
dc.subject.other	Calculations	en
dc.subject.other	Defects	en
dc.subject.other	Density functional theory	en
dc.subject.other	Gate dielectrics	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Impurities	en
dc.subject.other	Vacancies	en
dc.subject.other	Germanium	en
dc.title	Ge-related impurities in high-k oxides: Carrier traps and interaction with native defects	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2011.03.080	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2011.03.080	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	Volatilization of a Ge substrate may generate a large number of impurities inside the gate dielectric of a Ge-based device. Here we use density-functional theory calculations to probe the stability of Ge atoms and GeO molecules inside Al2O3 and Y2O3 high-k oxides. We identify the most stable impurity configurations and we show that both types of extrinsic species generate levels inside the energy band gap of the host systems. We also find that Ge and GeO impurities get trapped at O vacancies and replace the vacancy-related carrier traps with different types of levels in the gap. The results identify atomic-scale mechanisms that underlie gate leakage and charge trapping in Ge-based electronic systems. (C) 2011 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2011.03.080	en
dc.identifier.isi	ISI:000292572700096	en
dc.identifier.volume	88	en
dc.identifier.issue	7	en
dc.identifier.spage	1432	en
dc.identifier.epage	1435	en