dc.contributor.author |
Zergioti, I |
en |
dc.contributor.author |
Makrygianni, M |
en |
dc.contributor.author |
Dimitrakis, P |
en |
dc.contributor.author |
Normand, P |
en |
dc.contributor.author |
Chatzandroulis, S |
en |
dc.date.accessioned |
2014-03-01T02:47:23Z |
|
dc.date.available |
2014-03-01T02:47:23Z |
|
dc.date.issued |
2011 |
en |
dc.identifier.issn |
0169-4332 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/33116 |
|
dc.subject |
Devices |
en |
dc.subject |
Laser-induced forward transfer |
en |
dc.subject |
Nanosecond |
en |
dc.subject |
Organic semiconductor |
en |
dc.subject.classification |
Chemistry, Physical |
en |
dc.subject.classification |
Materials Science, Coatings & Films |
en |
dc.subject.classification |
Physics, Applied |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
Bottom gate |
en |
dc.subject.other |
Devices |
en |
dc.subject.other |
Donor substrates |
en |
dc.subject.other |
Electrical characterization |
en |
dc.subject.other |
Field-effect |
en |
dc.subject.other |
Laser fluences |
en |
dc.subject.other |
Laser printing |
en |
dc.subject.other |
Laser-induced forward transfer |
en |
dc.subject.other |
Nanosecond |
en |
dc.subject.other |
Organic electronics |
en |
dc.subject.other |
Organic semiconductor |
en |
dc.subject.other |
Organic/inorganic |
en |
dc.subject.other |
Poly-3-hexylthiophene |
en |
dc.subject.other |
Poly-thiophene |
en |
dc.subject.other |
Regio-regular |
en |
dc.subject.other |
Release layer |
en |
dc.subject.other |
Saturation regime |
en |
dc.subject.other |
Si substrates |
en |
dc.subject.other |
Solid-phase |
en |
dc.subject.other |
Source and drain electrodes |
en |
dc.subject.other |
Subthreshold |
en |
dc.subject.other |
Mass transfer |
en |
dc.subject.other |
Pixels |
en |
dc.subject.other |
Semiconducting organic compounds |
en |
dc.subject.other |
Semiconductor lasers |
en |
dc.subject.other |
Substrates |
en |
dc.subject.other |
Thin film transistors |
en |
dc.subject.other |
Organic lasers |
en |
dc.title |
Laser printing of polythiophene for organic electronics |
en |
heal.type |
conferenceItem |
en |
heal.identifier.primary |
10.1016/j.apsusc.2010.10.145 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/j.apsusc.2010.10.145 |
en |
heal.language |
English |
en |
heal.publicationDate |
2011 |
en |
heal.abstract |
We report on the development of hybrid organic/inorganic thin-film transistors using regioregular poly-3-hexylthiophene (P3HT) semiconductor material deposited by means of the solid-phase Laser Induced Forward Transfer (LIFT) technique. P3HT pixels were LIFT-printed onto Au/Ti source and drain electrodes formed on silicon dioxide/p(+)-type Si substrate. Deposition of the P3HT pixels was investigated as a function of the laser fluence using donor substrates with and without a dynamic release layer. Device electrical characterization reveals efficient field-effect action of the bottom gate on the organic channel. The transfer I-DS-V-GS characteristics exhibit well-defined sub-threshold, linear and saturation regimes designating LIFT as a promising technique for hybrid organic/inorganic transistor technology. (C) 2010 Elsevier B. V. All rights reserved. |
en |
heal.publisher |
ELSEVIER SCIENCE BV |
en |
heal.journalName |
Applied Surface Science |
en |
dc.identifier.doi |
10.1016/j.apsusc.2010.10.145 |
en |
dc.identifier.isi |
ISI:000288007500006 |
en |
dc.identifier.volume |
257 |
en |
dc.identifier.issue |
12 |
en |
dc.identifier.spage |
5148 |
en |
dc.identifier.epage |
5151 |
en |