Linking the operating parameters of chemical vapor deposition reactors with film conformality and surface nano-morphology

Cheimarios, N; Garnelis, S; Kokkoris, G; Boudouvis, AG

dc.contributor.author	Cheimarios, N	en
dc.contributor.author	Garnelis, S	en
dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T02:47:24Z
dc.date.available	2014-03-01T02:47:24Z
dc.date.issued	2011	en
dc.identifier.issn	1533-4880	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33118
dc.subject	Computational fluid dynamics	en
dc.subject	Feature scale model	en
dc.subject	Kinetic Monte Carlo	en
dc.subject	Multiscale modeling	en
dc.subject	Nano-morphology	en
dc.subject	Silicon deposition	en
dc.subject.classification	Chemistry, Multidisciplinary	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Kinetic Monte Carlo	en
dc.subject.other	Multi-scale Modeling	en
dc.subject.other	Nanomorphologies	en
dc.subject.other	Scale models	en
dc.subject.other	Silicon deposition	en
dc.subject.other	Computational fluid dynamics	en
dc.subject.other	Evolutionary algorithms	en
dc.subject.other	Monte Carlo methods	en
dc.subject.other	Morphology	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Silicon	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Surface chemistry	en
dc.subject.other	Chemical vapor deposition	en
dc.title	Linking the operating parameters of chemical vapor deposition reactors with film conformality and surface nano-morphology	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1166/jnn.2011.5076	en
heal.identifier.secondary	http://dx.doi.org/10.1166/jnn.2011.5076	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	A multiscale modeling framework is used to couple the co-existing scales, i.e., macro-, micro- and nano-scale, in chemical vapor deposition (CVD) processes. The framework consists of a reactor scale model (RSM) for the description of the transport phenomena in the bulk phase (macro-scale) of a CVD reactor and two models for the micro- and nano-scale: (a) A feature scale model (FSM) describing the deposition of a film inside features on a predefined micro-topography on the wafer and (b) a nano-morphology model (NMM) describing the surface morphology evolution during thin film deposition on an initially flat surface. The FSM is deterministic and consists of three sub-models: A ballistic model for the species' transport inside features, a surface chemistry model, and a profile evolution algorithm based on the level set method. The NMM is stochastic and is based on the kinetic Monte Carlo method. The coupling of RSM with FSM is performed through a correction of the species consumption on the wafer. The linking of RSM with NMM is performed through ""feeding"" of the deposition rate calculated by RSM to the NMM. The case study is CVD of Silicon (Si) from Silane. The effect of the reactor's operating parameters on the Si film conformality inside trenches is investigated by the coupling of RSM with FSM. The formation of dimmers on an initially flat Si (001) surface as well as the periodic change of the surface nano-morphology is predicted. Copyright © 2011 American Scientific Publishers All rights reserved.	en
heal.publisher	AMER SCIENTIFIC PUBLISHERS	en
heal.journalName	Journal of Nanoscience and Nanotechnology	en
dc.identifier.doi	10.1166/jnn.2011.5076	en
dc.identifier.isi	ISI:000296209900087	en
dc.identifier.volume	11	en
dc.identifier.issue	9	en
dc.identifier.spage	8132	en
dc.identifier.epage	8137	en