Optimization of hafnium oxide for use in nanoparticle memories

Verrelli, E; Tsoukalas, D

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:47:26Z
dc.date.available	2014-03-01T02:47:26Z
dc.date.issued	2011	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33148
dc.subject	Charge trapping	en
dc.subject	Control oxide	en
dc.subject	Flash	en
dc.subject	Hafnium oxide	en
dc.subject	Leakage current	en
dc.subject	Nanoparticle memory	en
dc.subject	RF magnetron sputtering	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Charge storage	en
dc.subject.other	Deposition temperatures	en
dc.subject.other	Dielectric stack	en
dc.subject.other	Flash	en
dc.subject.other	Metallic nanoparticles	en
dc.subject.other	Non-volatile memories	en
dc.subject.other	Optimized conditions	en
dc.subject.other	Post deposition annealing	en
dc.subject.other	rf-Magnetron sputtering	en
dc.subject.other	Silicon oxide layers	en
dc.subject.other	Trapping properties	en
dc.subject.other	Charge trapping	en
dc.subject.other	Descaling	en
dc.subject.other	Dielectric materials	en
dc.subject.other	Dielectric properties	en
dc.subject.other	Hafnium	en
dc.subject.other	Hafnium oxides	en
dc.subject.other	Magnetron sputtering	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Optimization	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Silicon oxides	en
dc.subject.other	Metallic compounds	en
dc.title	Optimization of hafnium oxide for use in nanoparticle memories	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2011.03.074	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2011.03.074	en
heal.language	English	en
heal.publicationDate	2011	en
heal.abstract	In this work we investigate the dielectric properties of hafnium oxide deposited by RF magnetron sputtering with the purpose to implement it as control oxide for non-volatile memories based on metallic nanoparticles as charge storage centers. The influence of deposition temperature, ambient and post-deposition annealing onto the trapping properties of hafnium oxide, deposited over a tunneling silicon oxide layer, will be discussed and optimized conditions under which no charge trapping is observed into the dielectric stack will be presented. (C) 2011 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2011.03.074	en
dc.identifier.isi	ISI:000292572700037	en
dc.identifier.volume	88	en
dc.identifier.issue	7	en
dc.identifier.spage	1189	en
dc.identifier.epage	1193	en