Stress measurements using Raman scattering

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T02:47:55Z
dc.date.available	2014-03-01T02:47:55Z
dc.date.issued	1990	en
dc.identifier.issn	01616374	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33441
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0025154729&partnerID=40&md5=bedea2084272a2f73305aa4c63fe98a9	en
dc.subject.other	Crystals--Strain	en
dc.subject.other	Spectroscopy, Raman--Applications	en
dc.subject.other	Stresses--Measurements	en
dc.subject.other	Crystalline Material Stress Diagnostics	en
dc.subject.other	Optical Phonon Raman Spectrum	en
dc.subject.other	Phonon Deformation Potentials	en
dc.subject.other	Raman Microprobe Stress Analysis	en
dc.subject.other	Thermoelastic Strains	en
dc.subject.other	Semiconductor Materials	en
dc.title	Stress measurements using Raman scattering	en
heal.type	conferenceItem	en
heal.publicationDate	1990	en
heal.abstract	The effects of stresses or strains on the Raman spectrum of optical phonons in crystalline materials are reviewed. In the presence of a general strain the symmetry of the crystal is altered. It is possible that the phonon degeneracies are lifted with an upward or downward shift of their frequencies. To first approximation the shifts are linear in the strain components. Knowledge of corresponding rates, closely related to the so-called phonon deformation potentials, allows the calculation of residual strains or stresses. Strain inhomogeneities and thermoelastic strains due to laser heating are shown to be detectable through Raman microprobing techniques. Applications of the method are presented with emphasis to Si and zincblende materials, strained heterostructures and superlattices.	en
heal.publisher	Publ by Electrochemical Soc Inc, Manchester, NH, United States	en
heal.journalName	Proceedings - The Electrochemical Society	en
dc.identifier.volume	90	en
dc.identifier.issue	11	en
dc.identifier.spage	298	en
dc.identifier.epage	326	en