Probability distribution modelling of electromigration induced failure times

Loupis, M; Avaritsiotis, J

dc.contributor.author	Loupis, M	en
dc.contributor.author	Avaritsiotis, J	en
dc.date.accessioned	2014-03-01T02:47:59Z
dc.date.available	2014-03-01T02:47:59Z
dc.date.issued	1991	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33481
dc.subject	Ambient Temperature	en
dc.subject	Data Model	en
dc.subject	Electromigration	en
dc.subject	Extreme Value Distribution	en
dc.subject	Lognormal Distribution	en
dc.subject	Probability Distribution	en
dc.title	Probability distribution modelling of electromigration induced failure times	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/MELCON.1991.161826	en
heal.identifier.secondary	http://dx.doi.org/10.1109/MELCON.1991.161826	en
heal.publicationDate	1991	en
heal.abstract	It has been shown that life data from electromigration tests on TiW+Al/Cu bilayer interconnects, under four different ambient temperatures are better fitted to a log extreme value distribution than to a Weibull or a lognormal one. The combination of the authors' results with simulated life data modeling done by J.M. Schoen (1980) indicates the same trend. It is believed that	en
heal.journalName	MELECON - IEEE Mediterranean Electrotechnical Conference	en
dc.identifier.doi	10.1109/MELCON.1991.161826	en