MOSFET modeling for analog circuit CAD: Problems and prospects

Tsividis, Y; Suyama, K

dc.contributor.author	Tsividis, Y	en
dc.contributor.author	Suyama, K	en
dc.date.accessioned	2014-03-01T02:48:12Z
dc.date.available	2014-03-01T02:48:12Z
dc.date.issued	1993	en
dc.identifier.issn	08865930	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33619
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-19244367217&partnerID=40&md5=ac9e98a1e321d920651193fff3a30d8f	en
dc.subject.other	Analog computers	en
dc.subject.other	Analog circuit CAD	en
dc.subject.other	Analog modeling techniques	en
dc.subject.other	CAD models	en
dc.subject.other	MOSFET modeling	en
dc.subject.other	Computer aided design	en
dc.title	MOSFET modeling for analog circuit CAD: Problems and prospects	en
heal.type	conferenceItem	en
heal.publicationDate	1993	en
heal.abstract	The requirements for good MOSFET modeling are discussed, as they apply to usage in analog and mixed analog-digital design. A set of benchmark tests that can be easily performed by the reader are given, and it is argued that most CAD models today fail such tests even for simple, long-channel devices at room temperature. A number of other problems are discussed, and in certain cases specific cures are suggested. The issue of parameter extraction is addressed. Finally, the context of model development and usage is considered, and it is argued that some of the factors responsible for the problems encountered in the modeling effort are of a non-technical nature.	en
heal.publisher	Publ by IEEE, Piscataway, NJ, United States	en
heal.journalName	Proceedings of the Custom Integrated Circuits Conference	en
dc.identifier.spage	14.1.1	en
dc.identifier.epage	14.1.6	en