Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates

Kouvatsos, D; Sarcona, G; Tsoukalas, D; Hatalis, M; Goustouridis, D; Stoemenos, J

dc.contributor.author	Kouvatsos, D	en
dc.contributor.author	Sarcona, G	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Hatalis, M	en
dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Stoemenos, J	en
dc.date.accessioned	2014-03-01T02:48:19Z
dc.date.available	2014-03-01T02:48:19Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33726
dc.subject	Amorphous Silicon	en
dc.subject	Liquid Crystal Display	en
dc.subject	Low Temperature	en
dc.subject	Polycrystalline Silicon	en
dc.subject	Single Crystal Silicon	en
dc.subject	Thin Film Transistor	en
dc.title	Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/AMLCD.1995.540974	en
heal.identifier.secondary	http://dx.doi.org/10.1109/AMLCD.1995.540974	en
heal.publicationDate	1995	en
heal.abstract	Thin film transistors (TFTs) on glass substates, necessary for the fabrication of active matrix liquid crystal displays (AMLCDs), are usually fabricated in amorphous silicon films deposited on low temperature sheet glass, such as soda lime glass, or in polycrystalline silicon films (as-deposited or crystallized) deposited on quartz or glass by LPCVD. The purpose of this work is to demonstrate the	en
heal.journalName	International Workshop on Active Matrix Liquid Crystal Displays	en
dc.identifier.doi	10.1109/AMLCD.1995.540974	en