Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results

Gaiseanu, F; Tsoukalas, D; Esteve, J; Postolache, C; Goustouridis, D; Tsoi, E

dc.contributor.author	Gaiseanu, F	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Esteve, J	en
dc.contributor.author	Postolache, C	en
dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Tsoi, E	en
dc.date.accessioned	2014-03-01T02:48:27Z
dc.date.available	2014-03-01T02:48:27Z
dc.date.issued	1997	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33823
dc.subject	Analytical Model	en
dc.title	Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/SMICND.1997.651590	en
heal.identifier.secondary	http://dx.doi.org/10.1109/SMICND.1997.651590	en
heal.publicationDate	1997	en
heal.abstract	The authors present an analytical model including the influence of the highly-doped silicon layer and of the intrinsic boron diffusion region on the chemical etching rate and on the chemical etching time, allowing one to control the self-limitation chemical etching process to obtain silicon micromechanical elements	en
heal.journalName	Semiconductor, International Conference	en
dc.identifier.doi	10.1109/SMICND.1997.651590	en