The influence of process physics on the MOS device performance the case of the reverse short channel effect

Tsoukalas, D; Tsamis, C

dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Tsamis, C	en
dc.date.accessioned	2014-03-01T02:48:29Z
dc.date.available	2014-03-01T02:48:29Z
dc.date.issued	1997	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33857
dc.subject	Device Simulation	en
dc.subject	Mos Device	en
dc.subject	Point Defect	en
dc.subject	Process Simulation	en
dc.subject	Silicon On Insulator	en
dc.subject	Short Channel Effect	en
dc.title	The influence of process physics on the MOS device performance the case of the reverse short channel effect	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/SMICND.1997.651238	en
heal.identifier.secondary	http://dx.doi.org/10.1109/SMICND.1997.651238	en
heal.publicationDate	1997	en
heal.abstract	The goal of the present review is to show how material experiments using simple structures combined with process simulation can give sufficient insight to complex device phenomena that are critical for the deep submicron MOS device performance. Specifically we shall first present experimental and simulation results on the 2-D distribution of silicon interstitial both in Si and Silicon-On-Insulator. The conclusion	en
heal.journalName	Semiconductor, International Conference	en
dc.identifier.doi	10.1109/SMICND.1997.651238	en