A 5 GHz fully integrated VCO in a SiGe bipolar technology

Kyranas, A; Papananos, Y

dc.contributor.author	Kyranas, A	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T02:48:47Z
dc.date.available	2014-03-01T02:48:47Z
dc.date.issued	2000	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34106
dc.subject	Phase Noise	en
dc.subject	Voltage Controlled Oscillator	en
dc.title	A 5 GHz fully integrated VCO in a SiGe bipolar technology	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISCAS.2000.857396	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISCAS.2000.857396	en
heal.publicationDate	2000	en
heal.abstract	A fully integrated voltage controlled oscillator operating at 5 GHz is presented. The circuit is designed in a SiGe bipolar technology employing three metal layers. The design is based on a fully integrated LC tank using square spiral inductors. The simulated phase noise is -101.4 dBc/Hz at 100 kHz offset. The effect of bias current on phase noise is also	en
heal.journalName	IEEE International Symposium on Circuits and Systems	en
dc.identifier.doi	10.1109/ISCAS.2000.857396	en