Analysis of transconductances at all levels of inversion in deep submicron CMOS

Bucher, M; Kuzazis, D; Krummenacher, F; Binkley, D; Foty, D; Pupunanos, Y

dc.contributor.author	Bucher, M	en
dc.contributor.author	Kuzazis, D	en
dc.contributor.author	Krummenacher, F	en
dc.contributor.author	Binkley, D	en
dc.contributor.author	Foty, D	en
dc.contributor.author	Pupunanos, Y	en
dc.date.accessioned	2014-03-01T02:49:12Z
dc.date.available	2014-03-01T02:49:12Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34411
dc.subject.other	Analog IC design	en
dc.subject.other	Analytical structure	en
dc.subject.other	Bias conditions	en
dc.subject.other	Channel length	en
dc.subject.other	CMOS technology	en
dc.subject.other	Deep submicron CMOS	en
dc.subject.other	In-depth analysis	en
dc.subject.other	Inversion coefficient	en
dc.subject.other	Mosfet model	en
dc.subject.other	Strong inversion	en
dc.subject.other	Weak inversions	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Design	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Transconductance	en
dc.title	Analysis of transconductances at all levels of inversion in deep submicron CMOS	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICECS.2002.1046464	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICECS.2002.1046464	en
heal.identifier.secondary	1046464	en
heal.publicationDate	2002	en
heal.abstract	This paper presents an in-depth analysis of transconductances in CMOS for advanced analog IC design. Transconductances in a 0.25μm CMOS technology have been measured over a large range of geometries and bias conditions. Gate(g mg), source(gms),drain(gmd)and bulk(g mb) transconductances are consistently normalized and represented vs. inversion coefficient ( I C ). from very weak to moderate and strong inversion. The ideal transconductance behavior in particular in weak inversion is analyzed via the analytical structure of the EKV MOSFET model. The new EKV 3.0 MOSFET model shows excellent abilities to correctly represent transconductances at all levels of inversion and channel lengths. © 2002 IEEE.	en
heal.journalName	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems	en
dc.identifier.doi	10.1109/ICECS.2002.1046464	en
dc.identifier.volume	3	en
dc.identifier.spage	1183	en
dc.identifier.epage	1186	en