Raman studies on oxygen doped GaN grown by molecular beam epitaxy

Papadimitriou, D; Ptak, AJ; Korakakis, D; Giles, NC; Myers, TH

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Ptak, AJ	en
dc.contributor.author	Korakakis, D	en
dc.contributor.author	Giles, NC	en
dc.contributor.author	Myers, TH	en
dc.date.accessioned	2014-03-01T02:49:16Z
dc.date.available	2014-03-01T02:49:16Z
dc.date.issued	2002	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34454
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0036375740&partnerID=40&md5=ae0983660cd6d2d2803741d91d6db56e	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Oxygen	en
dc.subject.other	Plasma applications	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Semiconductor growth	en
dc.subject.other	Strain	en
dc.subject.other	Compressive strain	en
dc.subject.other	Film polarity	en
dc.subject.other	Gallium nitride film	en
dc.subject.other	Oxygen doped gallium nitride	en
dc.subject.other	Plasma-assisted molecular beam epitaxy	en
dc.subject.other	Strain effect	en
dc.subject.other	Gallium nitride	en
dc.title	Raman studies on oxygen doped GaN grown by molecular beam epitaxy	en
heal.type	conferenceItem	en
heal.publicationDate	2002	en
heal.abstract	High quality Ga-polarity GaN films were grown by plasma-assisted molecular beam epitaxy to study strain effects due to oxygen incorporation. Oxygen concentrations up to 2 × 1022 cm-3 were studied. Layers containing oxygen at levels above 1022 cm-3 exhibit severe cracking while oxygen concentrations less than 1021 cm-3 apparently does not introduce significant strain. Raman spectra of O2-doped films were evaluated with respect to spectra of unintentionally doped GaN films (n=4×1014 cm-3) grown under the same conditions except for the O2-flux. Analysis of the E2 (high frequency phonon mode near 570 cm-1) Raman band indicated the heaviest doped samples exhibit compressive strain. Frequency-shifts between 0.7 and 0.9 cm-1 were observed as a function of the distance from the crack edges in the heavily doped samples, implying a strain (δα/α) of the order of 5×10-4.	en
heal.journalName	Materials Research Society Symposium - Proceedings	en
dc.identifier.volume	693	en
dc.identifier.spage	41	en
dc.identifier.epage	46	en