Structural and optical characterization of CuxGaySe2 thin films under excitation with above and below band gap laser light

Xue, C; Papadimitriou, D; Raptis, YS; Riedle, T; Esser, N; Richter, W; Siebentritt, S; Nishiwaki, S; Albert, J; Lux-Steiner, MCh

dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Riedle, T	en
dc.contributor.author	Esser, N	en
dc.contributor.author	Richter, W	en
dc.contributor.author	Siebentritt, S	en
dc.contributor.author	Nishiwaki, S	en
dc.contributor.author	Albert, J	en
dc.contributor.author	Lux-Steiner, MCh	en
dc.date.accessioned	2014-03-01T02:49:16Z
dc.date.available	2014-03-01T02:49:16Z
dc.date.issued	2002	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34460
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0036997176&partnerID=40&md5=562cf63e724a0de92ccfca51489f0ab0	en
dc.subject.other	Crystals	en
dc.subject.other	Film growth	en
dc.subject.other	Laser beam effects	en
dc.subject.other	Light polarization	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman scattering	en
dc.subject.other	Spectroscopic analysis	en
dc.subject.other	Thin films	en
dc.subject.other	Laser light	en
dc.subject.other	Copper compounds	en
dc.title	Structural and optical characterization of CuxGaySe2 thin films under excitation with above and below band gap laser light	en
heal.type	conferenceItem	en
heal.publicationDate	2002	en
heal.abstract	CuxGaySe2 MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2 films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2 films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2 films, excited by laser light near and below the material band gap, show intense modes at 197 cm-1, 187 cm-1, and 277 cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2 indicate that CuxSey-crystaltites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.	en
heal.journalName	Materials Research Society Symposium - Proceedings	en
dc.identifier.volume	730	en
dc.identifier.spage	73	en
dc.identifier.epage	78	en