The EKV 3.0 compact MOS transistor model: Accounting for deep-submicron aspects

Bucher, M; Enz, C; Krummenacher, F; Sallese, J-M; Lallement, C; Porret, A-S

dc.contributor.author	Bucher, M	en
dc.contributor.author	Enz, C	en
dc.contributor.author	Krummenacher, F	en
dc.contributor.author	Sallese, J-M	en
dc.contributor.author	Lallement, C	en
dc.contributor.author	Porret, A-S	en
dc.date.accessioned	2014-03-01T02:49:17Z
dc.date.available	2014-03-01T02:49:17Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34465
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-6344292512&partnerID=40&md5=3d086d045ff1103bde2812d13e84b0c0	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Electric potential	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Mathematical models	en
dc.subject.other	Signal processing	en
dc.subject.other	Spurious signal noise	en
dc.subject.other	Transconductance	en
dc.subject.other	EKV models	en
dc.subject.other	Normalization	en
dc.subject.other	Submicrons	en
dc.subject.other	Transistor models	en
dc.subject.other	MOSFET devices	en
dc.title	The EKV 3.0 compact MOS transistor model: Accounting for deep-submicron aspects	en
heal.type	conferenceItem	en
heal.publicationDate	2002	en
heal.abstract	The EKV 3.0 compact MOS transistor model for advanced IC design is presented. Its basis is an ideal analytical charge-based model including static to non-quasistatic dynamic aspects and noise. The ideal model is extended to account for the major second-order effects in deep-submicron CMOS technologies resulting from technology scaling and from short-channel effects. It is shown how these non-idealities affect the ideal device characteristics. The increasingly important moderate and weak inversion operation are emphasized. The hierarchical structure of the model is presented, essential features and effects are outlined and illustrated with respect to device characteristics in deep-submicron CMOS.	en
heal.journalName	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002	en
dc.identifier.spage	670	en
dc.identifier.epage	673	en