The foundations of the EKV MOS transistor charge-based model

Enz, C; Bucher, M; Porret, A-S; Sallese, J-M; Krummenacher, F

dc.contributor.author	Enz, C	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Porret, A-S	en
dc.contributor.author	Sallese, J-M	en
dc.contributor.author	Krummenacher, F	en
dc.date.accessioned	2014-03-01T02:49:17Z
dc.date.available	2014-03-01T02:49:17Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34466
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0013084791&partnerID=40&md5=099a90ac36a8b81fee6588f15037bfa4	en
dc.subject.other	Carrier mobility	en
dc.subject.other	Electric potential	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Permittivity	en
dc.subject.other	Silicon	en
dc.subject.other	Thermodynamics	en
dc.subject.other	Transconductance	en
dc.subject.other	Charge density	en
dc.subject.other	Drain currents	en
dc.subject.other	Gate voltages	en
dc.subject.other	Silicon permittivity	en
dc.subject.other	MOSFET devices	en
dc.title	The foundations of the EKV MOS transistor charge-based model	en
heal.type	conferenceItem	en
heal.publicationDate	2002	en
heal.abstract	This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and small-signal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion.	en
heal.journalName	2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002	en
dc.identifier.spage	666	en
dc.identifier.epage	669	en