A multi-stack insulator silicon-organic memory device with gold nanoparticles

Kolliopoulou, S; Tsoukalas, D; Dimitrakis, P; Normand, P; Zhang, H; Cant, N; Evans, S; Paul, S; Pearson, C; Molloy, A; Petty, M

dc.contributor.author	Kolliopoulou, S	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Zhang, H	en
dc.contributor.author	Cant, N	en
dc.contributor.author	Evans, S	en
dc.contributor.author	Paul, S	en
dc.contributor.author	Pearson, C	en
dc.contributor.author	Molloy, A	en
dc.contributor.author	Petty, M	en
dc.date.accessioned	2014-03-01T02:49:17Z
dc.date.available	2014-03-01T02:49:17Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34478
dc.subject	Gold Nanoparticle	en
dc.subject	Low Voltage	en
dc.subject	Retention Time	en
dc.subject	Room Temperature	en
dc.subject	Threshold Voltage	en
dc.title	A multi-stack insulator silicon-organic memory device with gold nanoparticles	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ESSDERC.2003.1256917	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ESSDERC.2003.1256917	en
heal.publicationDate	2003	en
heal.abstract	We demonstrate a memory device, using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing. The nanoparticles are deposited over a thin thermal silicon dioxide layer that insulates them from the device silicon channel. An organic insulator deposited by the Langmuir-Blodget technique at room temperature separates the aluminium gate electrode from the nanoparticles. The device exhibits	en
heal.journalName	Solid-State Device Research European Conference	en
dc.identifier.doi	10.1109/ESSDERC.2003.1256917	en