Characterization of Solar Cells by Optical Spectroscopic Techniques

Xu, HY; Xue, C; Papadimitriou, D

dc.contributor.author	Xu, HY	en
dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T02:49:23Z
dc.date.available	2014-03-01T02:49:23Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34566
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0141453582&partnerID=40&md5=e1837fb09cacb9f0f7305e50ec2d4f75	en
dc.subject.other	Energy gap	en
dc.subject.other	Light interference	en
dc.subject.other	Light reflection	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Spectroscopic analysis	en
dc.subject.other	Spectrum analysis	en
dc.subject.other	Optical spectroscopy	en
dc.subject.other	Solar cells	en
dc.title	Characterization of Solar Cells by Optical Spectroscopic Techniques	en
heal.type	conferenceItem	en
heal.publicationDate	2003	en
heal.abstract	Photoreflectance (PR), electroreflectance (ER), photoluminescence (PL), and surface photovoltage spectroscopy (SPV) were applied at room temperature (RT) to characterize ZnO/CdS/CuGaSe2 based solar cells deposited on Mo/glass substrates. These techniques are complementary and yield information about structural, optical and electronic properties of the cell. The PL and ER bands showed contributions of both the CdS and the underlying CuGaSe2 layer. The valence band edge structure was obtained from the ER spectra and was confirmed by low temperature (LT) PR spectroscopy. The band gap of CuGaSe2 was estimated by fitting the LT PR spectra and from the absorption edge of the SPV spectrum. Moreover, the CuGaSe2 layer thickness was calculated from the interference fringes of the PR and ER spectra in the spectral region below the material band gap.	en
heal.journalName	Proceedings of the International Symposium on Test and Measurement	en
dc.identifier.volume	5	en
dc.identifier.spage	3517	en
dc.identifier.epage	3519	en