Development of a CMOS low-noise analog front-end ASIC for X-ray imaging applications

Zervakis, Em; Loukas, D; Haralabidis, N; Pavlidis, A

dc.contributor.author	Zervakis, Em	en
dc.contributor.author	Loukas, D	en
dc.contributor.author	Haralabidis, N	en
dc.contributor.author	Pavlidis, A	en
dc.date.accessioned	2014-03-01T02:49:23Z
dc.date.available	2014-03-01T02:49:23Z
dc.date.issued	2003	en
dc.identifier.issn	02714310	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34572
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0038080943&partnerID=40&md5=ad5874f7aa85ff96791cdeec4fb629ca	en
dc.subject.other	Application specific integrated circuits	en
dc.subject.other	Capacitance	en
dc.subject.other	Imaging techniques	en
dc.subject.other	Leakage currents	en
dc.subject.other	Photons	en
dc.subject.other	Semiconducting cadmium telluride	en
dc.subject.other	Sensors	en
dc.subject.other	Spurious signal noise	en
dc.subject.other	X-ray imaging	en
dc.subject.other	CMOS integrated circuits	en
dc.title	Development of a CMOS low-noise analog front-end ASIC for X-ray imaging applications	en
heal.type	conferenceItem	en
heal.publicationDate	2003	en
heal.abstract	High density compound materials (CdTe, GaAs, HgI2) are currently evaluated as direct photon conversion sensors for applications in X-ray imaging. A new front-end stage has been designed with the aim to be implemented as readout chain in a luggage inspection system based on a linear array of CdTe sensors. Both types of electron or hole collecting CdTe sensors will be evaluated. Each detecting element is characterized by leakage current smaller than 5nA/mm2 at working point and capacitance in the range of 0.5pF. A low noise front-end chain has been developed based on the voltage mode architecture. The operation of the front-end stage is optimized for a 2pF capacitance, system input capacitance, and for energy range of 20-220keV. A prototype ASIC has been fabricated in a commercial 0.6um CMOS process.	en
heal.journalName	Proceedings - IEEE International Symposium on Circuits and Systems	en
dc.identifier.volume	4	en
dc.identifier.spage	IV764	en
dc.identifier.epage	IV767	en