HEAL DSpace

In-situ Monitoring of Semiconductor Growth by Raman Spectroscopy

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dc.contributor.author Kontos, AG en
dc.contributor.author Hinrichs, K en
dc.contributor.author Papadimitriou, D en
dc.contributor.author Esser, N en
dc.date.accessioned 2014-03-01T02:49:24Z
dc.date.available 2014-03-01T02:49:24Z
dc.date.issued 2003 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/34587
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-0141676555&partnerID=40&md5=693524f6d4044518afaebbadcc018509 en
dc.subject.other Deposition en
dc.subject.other Molecular beam epitaxy en
dc.subject.other Polycrystalline materials en
dc.subject.other Raman spectroscopy en
dc.subject.other Semiconducting films en
dc.subject.other Semiconducting zinc compounds en
dc.subject.other Thermal effects en
dc.subject.other Structural stability en
dc.subject.other Semiconductor growth en
dc.title In-situ Monitoring of Semiconductor Growth by Raman Spectroscopy en
heal.type conferenceItem en
heal.publicationDate 2003 en
heal.abstract Monitoring of semiconductor growth by Raman spectroscopy was presented. ZnSe films were grown on CuInSe2 polycrystalline substrates by molecular beam epitaxy. The Raman spectra revealed the structural stability of the ZnSe films after annealing upto 550°C, indicated the formation of nanocrystalline ZnSe islands and development of thermally induced strains in annealed films. en
heal.journalName Proceedings of the International Symposium on Test and Measurement en
dc.identifier.volume 5 en
dc.identifier.spage 3511 en
dc.identifier.epage 3513 en


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