dc.contributor.author |
Meier, J |
en |
dc.contributor.author |
Kroll, U |
en |
dc.contributor.author |
Spitznagel, J |
en |
dc.contributor.author |
Benagli, S |
en |
dc.contributor.author |
Roschek, T |
en |
dc.contributor.author |
Pfanner, G |
en |
dc.contributor.author |
Ellert, C |
en |
dc.contributor.author |
Androutsopoulos, G |
en |
dc.contributor.author |
Hugli, A |
en |
dc.contributor.author |
Nagel, M |
en |
dc.contributor.author |
Bucher, C |
en |
dc.contributor.author |
Feitknecht, L |
en |
dc.contributor.author |
Buchel, G |
en |
dc.contributor.author |
Buchel, A |
en |
dc.date.accessioned |
2014-03-01T02:49:57Z |
|
dc.date.available |
2014-03-01T02:49:57Z |
|
dc.date.issued |
2005 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/34824 |
|
dc.subject |
Amorphous Silicon |
en |
dc.subject |
Silicon Solar Cell |
en |
dc.subject |
Thin Film |
en |
dc.subject |
Next Generation |
en |
dc.title |
Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems |
en |
heal.type |
conferenceItem |
en |
heal.identifier.primary |
10.1109/PVSC.2005.1488418 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1109/PVSC.2005.1488418 |
en |
heal.publicationDate |
2005 |
en |
heal.abstract |
UNAXIS KAI PECVD reactors developed for AM LCD technology have been demonstrated to possess a high potential for thin film silicon solar cells based on amorphous and microcrystalline silicon. For the next generation of thin film modules with highly effective light-trapping LP-CVD ZnO large-area deposition is developed at Unaxis as well, in combination with a very simple but effective back |
en |
heal.journalName |
Photovoltaic Specialists, IEEE Conference |
en |
dc.identifier.doi |
10.1109/PVSC.2005.1488418 |
en |