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Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems

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dc.contributor.author Meier, J en
dc.contributor.author Kroll, U en
dc.contributor.author Spitznagel, J en
dc.contributor.author Benagli, S en
dc.contributor.author Roschek, T en
dc.contributor.author Pfanner, G en
dc.contributor.author Ellert, C en
dc.contributor.author Androutsopoulos, G en
dc.contributor.author Hugli, A en
dc.contributor.author Nagel, M en
dc.contributor.author Bucher, C en
dc.contributor.author Feitknecht, L en
dc.contributor.author Buchel, G en
dc.contributor.author Buchel, A en
dc.date.accessioned 2014-03-01T02:49:57Z
dc.date.available 2014-03-01T02:49:57Z
dc.date.issued 2005 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/34824
dc.subject Amorphous Silicon en
dc.subject Silicon Solar Cell en
dc.subject Thin Film en
dc.subject Next Generation en
dc.title Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems en
heal.type conferenceItem en
heal.identifier.primary 10.1109/PVSC.2005.1488418 en
heal.identifier.secondary http://dx.doi.org/10.1109/PVSC.2005.1488418 en
heal.publicationDate 2005 en
heal.abstract UNAXIS KAI PECVD reactors developed for AM LCD technology have been demonstrated to possess a high potential for thin film silicon solar cells based on amorphous and microcrystalline silicon. For the next generation of thin film modules with highly effective light-trapping LP-CVD ZnO large-area deposition is developed at Unaxis as well, in combination with a very simple but effective back en
heal.journalName Photovoltaic Specialists, IEEE Conference en
dc.identifier.doi 10.1109/PVSC.2005.1488418 en


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