Role of Low O/sub 2/ Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin Films on Si Substrates

Pandis, C; Brilis, N; Tsamakis, D; Ali, H; Krishnamoorthy, S; Iliadis, A

dc.contributor.author	Pandis, C	en
dc.contributor.author	Brilis, N	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Ali, H	en
dc.contributor.author	Krishnamoorthy, S	en
dc.contributor.author	Iliadis, A	en
dc.date.accessioned	2014-03-01T02:49:57Z
dc.date.available	2014-03-01T02:49:57Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34825
dc.subject	Electrical Properties	en
dc.subject	Growth Parameter	en
dc.subject	zno thin film	en
dc.title	Role of Low O/sub 2/ Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin Films on Si Substrates	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2005.1596047	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2005.1596047	en
heal.publicationDate	2005	en
heal.abstract	Recently there has been noticeable interest in the fabrication and study of ZnO films for a variety of electrical and optical devices. Reports indicate that the electrical properties of undoped ZnO thin films can be controlled by changing the growth parameters as stated in Ji Nan Zeng et al. (2002) such as: O2 partial pressure during growth, deposition temperature as	en
heal.journalName	Semiconductor Device Research International Symposium	en
dc.identifier.doi	10.1109/ISDRS.2005.1596047	en