Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

Larsen, AN; Kanjilal, A; Hansen, JL; Gaiduk, P; Normand, P; Dimitrakis, P; Tsoukalas, D; Cherkashin, N; Claverie, A

dc.contributor.author	Larsen, AN	en
dc.contributor.author	Kanjilal, A	en
dc.contributor.author	Hansen, JL	en
dc.contributor.author	Gaiduk, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T02:50:05Z
dc.date.available	2014-03-01T02:50:05Z
dc.date.issued	2005	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34895
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-20344383492&partnerID=40&md5=0e4e4ce4fcb2b44330e6351198b9403e	en
dc.subject.other	Capacitance	en
dc.subject.other	Electric potential	en
dc.subject.other	Electric power utilization	en
dc.subject.other	Electron tunneling	en
dc.subject.other	Gates (transistor)	en
dc.subject.other	Logic devices	en
dc.subject.other	Melting	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	MOS capacitors	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Potential energy	en
dc.subject.other	Semiconducting germanium	en
dc.subject.other	Silica	en
dc.subject.other	Melting temperatures	en
dc.subject.other	Nanocrystal size	en
dc.subject.other	Rapid thermal processing (RTP)	en
dc.subject.other	Spatial distribution	en
dc.subject.other	Nanostructured materials	en
dc.title	Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing	en
heal.type	conferenceItem	en
heal.identifier.secondary	D6.2	en
heal.publicationDate	2005	en
heal.abstract	A method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam epitaxy (MBE) and rapid thermal processing (RTF) is presented. The method takes advantage of the very high precision by which a very thin Ge layer can be deposited by MBE. With proper choice of process parameters the nanocrystal size can be varied between ∼3 and ∼8 nm and the area-density between ∼1×1011 and ∼1×10 12 dots/cm2. The tunneling oxide thickness is determined by the thickness of a thermally grown SiO2 layer, and is typically 4 nm. C-V measurements of MOS capacitors reveal hole and electron injection from the substrate into the nanocrystals. Memory windows of about 0.2 and 0.5 V for gate-voltage sweeps of 3 and 6 V, respectively, are achieved. © 2005 Materials Research Society.	en
heal.journalName	Materials Research Society Symposium Proceedings	en
dc.identifier.volume	830	en
dc.identifier.spage	263	en
dc.identifier.epage	267	en