Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories

Kolliopoulou, S; Tsoukalas, D; Dimitrakis, P; Normand, P; Paul, S; Pearson, C; Molloy, A; Petty, MC

dc.contributor.author	Kolliopoulou, S	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Paul, S	en
dc.contributor.author	Pearson, C	en
dc.contributor.author	Molloy, A	en
dc.contributor.author	Petty, MC	en
dc.date.accessioned	2014-03-01T02:50:06Z
dc.date.available	2014-03-01T02:50:06Z
dc.date.issued	2005	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34896
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-20344408050&partnerID=40&md5=df314917b959a58adeac4e056e3a9616	en
dc.subject.other	Electric insulators	en
dc.subject.other	Gold	en
dc.subject.other	Langmuir Blodgett films	en
dc.subject.other	Metallizing	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	Oxides	en
dc.subject.other	Silicon	en
dc.subject.other	Thermal effects	en
dc.subject.other	Coulomb blockade phenomena	en
dc.subject.other	Electronic coupling	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Non-volatile memories	en
dc.subject.other	MISFET devices	en
dc.title	Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories	en
heal.type	conferenceItem	en
heal.identifier.secondary	D6.7	en
heal.publicationDate	2005	en
heal.abstract	In this work, we demonstrate a MISFET memory device that incorporates a monolayer of Langmuir-Blodgett (LB) deposited gold nanoparticles as floating gate charge storage elements. The FET device is fabricated on a SOI substrate using conventional silicon processing. The nanoparticle layer is separated from the channel area of the FET with a 5 nm thermal SiC2 layer and is isolated from Al gate contact with a LB-deposited organic insulator layer. The memory effect is tested using voltage pulses on the gate of the device and monitored through drain current measurements. The nanocrystals can be charged either from the channel through the thermal oxide layer by applying pulses smaller than 5 V or from the gate through the organic insulator for higher voltage depending on the pulse duration. © 2005 Materials Research Society.	en
heal.journalName	Materials Research Society Symposium Proceedings	en
dc.identifier.volume	830	en
dc.identifier.spage	287	en
dc.identifier.epage	292	en