Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

Pandis, Ch; Brills, N; Tsamakis, D; Ali, H; Krishnamoorthy, S; Iliadis, AA

dc.contributor.author	Pandis, Ch	en
dc.contributor.author	Brills, N	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Ali, H	en
dc.contributor.author	Krishnamoorthy, S	en
dc.contributor.author	Iliadis, AA	en
dc.date.accessioned	2014-03-01T02:50:11Z
dc.date.available	2014-03-01T02:50:11Z
dc.date.issued	2005	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34946
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-33847242224&partnerID=40&md5=d4c20f3f35b7f6cf407cbb366eaf6ae5	en
dc.title	Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates	en
heal.type	conferenceItem	en
heal.identifier.secondary	1596047	en
heal.publicationDate	2005	en
heal.abstract	[No abstract available]	en
heal.journalName	2005 International Semiconductor Device Research Symposium	en
dc.identifier.volume	2005	en
dc.identifier.spage	191	en
dc.identifier.epage	192	en