Synthesis and electrical characterization of a MOS memory containing Pt nanoparticles deposited at a SiO2/ HfO2 interface

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T02:50:13Z
dc.date.available	2014-03-01T02:50:13Z
dc.date.issued	2005	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34961
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-20344371692&partnerID=40&md5=6498344a60d8c6bce09d85bb6b5ad5d7	en
dc.subject.other	Capacitance measurement	en
dc.subject.other	Characterization	en
dc.subject.other	Electric power utilization	en
dc.subject.other	Hafnium compounds	en
dc.subject.other	MOS devices	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	Platinum	en
dc.subject.other	Semiconductor quantum wells	en
dc.subject.other	Silica	en
dc.subject.other	Synthesis (chemical)	en
dc.subject.other	Voltage measurement	en
dc.subject.other	Degree of scalability	en
dc.subject.other	Dielectric layers	en
dc.subject.other	Electrical characterization	en
dc.subject.other	Metal nanoparticles	en
dc.subject.other	Non-volatility	en
dc.subject.other	Nanostructured materials	en
dc.title	Synthesis and electrical characterization of a MOS memory containing Pt nanoparticles deposited at a SiO2/ HfO2 interface	en
heal.type	conferenceItem	en
heal.identifier.secondary	D6.4	en
heal.publicationDate	2005	en
heal.abstract	MOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles. We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device. © 2005 Materials Research Society.	en
heal.journalName	Materials Research Society Symposium Proceedings	en
dc.identifier.volume	830	en
dc.identifier.spage	275	en
dc.identifier.epage	280	en