Laser annealing of implanted silicon carbide and raman characterization

Zergioti, I; Kontos, AG; Zekentes, K; Boutopoulos, C; Terzis, P; Raptis, YS

dc.contributor.author	Zergioti, I	en
dc.contributor.author	Kontos, AG	en
dc.contributor.author	Zekentes, K	en
dc.contributor.author	Boutopoulos, C	en
dc.contributor.author	Terzis, P	en
dc.contributor.author	Raptis, YS	en
dc.date.accessioned	2014-03-01T02:50:27Z
dc.date.available	2014-03-01T02:50:27Z
dc.date.issued	2006	en
dc.identifier.issn	0277786X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35117
dc.subject	Laser annealing	en
dc.subject	Raman spectroscopy	en
dc.subject	Silicon carbide	en
dc.subject.other	Aluminum	en
dc.subject.other	Annealing	en
dc.subject.other	Backscattering	en
dc.subject.other	Crystal structure	en
dc.subject.other	Ion implantation	en
dc.subject.other	Laser pulses	en
dc.subject.other	Neodymium	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Reflection	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	WSI circuits	en
dc.subject.other	Electrical activation	en
dc.subject.other	Infrared reflectivity	en
dc.subject.other	Laser annealing	en
dc.subject.other	Micro-Raman spectroscopy	en
dc.subject.other	Silicon carbide	en
dc.title	Laser annealing of implanted silicon carbide and raman characterization	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1117/12.669497	en
heal.identifier.secondary	http://dx.doi.org/10.1117/12.669497	en
heal.identifier.secondary	626135	en
heal.publicationDate	2006	en
heal.abstract	Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the second (532nm) and third (355nm) harmonic of a Nd:YAG laser at 4ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Restsrahlen band.	en
heal.journalName	Proceedings of SPIE - The International Society for Optical Engineering	en
dc.identifier.doi	10.1117/12.669497	en
dc.identifier.volume	6261 II	en