EKV3 parameter extraction and characterization of 90nm RF-CMOS technology

Yoshitomi, S; Bazigos, A; Bucher, M

dc.contributor.author	Yoshitomi, S	en
dc.contributor.author	Bazigos, A	en
dc.contributor.author	Bucher, M	en
dc.date.accessioned	2014-03-01T02:51:05Z
dc.date.available	2014-03-01T02:51:05Z
dc.date.issued	2007	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35352
dc.subject	Compact modelling	en
dc.subject	EKV3 model	en
dc.subject	Parameter extraction	en
dc.subject	RF CMOS	en
dc.subject	RF parasitics	en
dc.subject	Scaling	en
dc.subject.other	Electronics industry	en
dc.subject.other	Integrated circuits	en
dc.subject.other	MOSFET devices	en
dc.subject.other	Networks (circuits)	en
dc.subject.other	Technology	en
dc.subject.other	Bias conditions	en
dc.subject.other	Compact modelling	en
dc.subject.other	EKV3 model	en
dc.subject.other	Ga te lengths	en
dc.subject.other	High frequencies	en
dc.subject.other	IC designs	en
dc.subject.other	International conferences	en
dc.subject.other	MOSFET modeling	en
dc.subject.other	MOSFETs	en
dc.subject.other	Number of fingers	en
dc.subject.other	Parasitics	en
dc.subject.other	RF CMOS	en
dc.subject.other	RF parasitics	en
dc.subject.other	S parameters	en
dc.subject.other	Scaling	en
dc.subject.other	Toshiba	en
dc.subject.other	Variations of	en
dc.subject.other	Parameter extraction	en
dc.title	EKV3 parameter extraction and characterization of 90nm RF-CMOS technology	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/MIXDES.2007.4286123	en
heal.identifier.secondary	http://dx.doi.org/10.1109/MIXDES.2007.4286123	en
heal.identifier.secondary	4286123	en
heal.publicationDate	2007	en
heal.abstract	EKV3 is a circuit-design-oriented compact MOSFET model for analog/RF IC design. The paper presents parameter extraction guidelines and modelling using EKV3 for TOSHIBA's 90nm RF-CMOS technology covering DC, CV and RF (S-parameter) and temperature scalability. RF verification was done by the use of multi-finger MOSFETs with many variations of gate length, width of unit fingers and number of fingers. A scalable RF model was successfully created. Extraction of RF parasitics and their scaling with RF layout is investigated. The EKV3 model successfully predicted high-frequency behaviour of 90nm CMOS up to 20GHz over a wide range of bias conditions. Copyright © 2007 by Department of Microelectronics & Computer Science, Technical University of Lodz.	en
heal.journalName	Proceedings of the 14th International Conference ""Mixed Design of Integrated Circuits and Systems"", MIXDES 2007	en
dc.identifier.doi	10.1109/MIXDES.2007.4286123	en
dc.identifier.spage	74	en
dc.identifier.epage	79	en