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Reliability and radiation effects in IC technologies

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dc.contributor.author Schrimpf, R en
dc.contributor.author Warren, K en
dc.contributor.author Weller, R en
dc.contributor.author Reed, R en
dc.contributor.author Massengill, L en
dc.contributor.author Alles, M en
dc.contributor.author Fleetwood, D en
dc.contributor.author Zhou, X en
dc.contributor.author Tsetseris, L en
dc.contributor.author Pantelides, S en
dc.date.accessioned 2014-03-01T02:51:29Z
dc.date.available 2014-03-01T02:51:29Z
dc.date.issued 2008 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/35510
dc.subject Energetic Particles en
dc.subject Integrated Circuit en
dc.subject Ionizing Radiation en
dc.subject Normal Operator en
dc.subject Radiation Effect en
dc.subject Single Event Upset en
dc.subject Soft Error en
dc.subject Error Rate en
dc.subject Single Event Effect en
dc.subject Total Ionizing Dose en
dc.title Reliability and radiation effects in IC technologies en
heal.type conferenceItem en
heal.identifier.primary 10.1109/RELPHY.2008.4558869 en
heal.identifier.secondary http://dx.doi.org/10.1109/RELPHY.2008.4558869 en
heal.publicationDate 2008 en
heal.abstract The reliability of advanced integrated circuit (IC) technologies may be dominated by the interaction of environmental radiation with the devices in the ICs. In particular, single event upsets (SEUs) and soft errors produced by single energetic particles may have a significant impact on the error rate of digital ICs. Additionally, some of the mechanisms responsible for long-term degradation of ICs en
heal.journalName Reliability Physics, Annual International Symposium en
dc.identifier.doi 10.1109/RELPHY.2008.4558869 en


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