Single-Event Upsets in photodiodes for multi-Gb/s data transmission

Pacheco, A; Troska, J; Amaral, L; Dris, S; Ricci, D; Sigaud, C; Vasey, F; Vichoudis, P

dc.contributor.author	Pacheco, A	en
dc.contributor.author	Troska, J	en
dc.contributor.author	Amaral, L	en
dc.contributor.author	Dris, S	en
dc.contributor.author	Ricci, D	en
dc.contributor.author	Sigaud, C	en
dc.contributor.author	Vasey, F	en
dc.contributor.author	Vichoudis, P	en
dc.date.accessioned	2014-03-01T02:51:29Z
dc.date.available	2014-03-01T02:51:29Z
dc.date.issued	2008	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35513
dc.subject	Cross Section	en
dc.subject	Data Transmission	en
dc.subject	Optical Fibre	en
dc.subject	Optical Receiver	en
dc.subject	Radiation Effect	en
dc.subject	Single Event Upset	en
dc.subject	Bit Error Rate	en
dc.title	Single-Event Upsets in photodiodes for multi-Gb/s data transmission	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/RADECS.2008.5782696	en
heal.identifier.secondary	http://dx.doi.org/10.1109/RADECS.2008.5782696	en
heal.publicationDate	2008	en
heal.abstract	A Single-Event Upset study has been carried out on PIN photodiodes from a range of manufacturers. A total of 22 devices of eleven types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data-rates (1.5, 2.0 and 2.5 Gb/s). We	en
heal.journalName	European Conference on Radiation and its Effects on Components and Systems	en
dc.identifier.doi	10.1109/RADECS.2008.5782696	en