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High-frequency scalable compact modelling of Si RF-CMOS technology

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dc.contributor.author Bazigos, A en
dc.contributor.author Bucher, M en
dc.contributor.author Sakalas, P en
dc.contributor.author Schroter, M en
dc.contributor.author Kraus, W en
dc.date.accessioned 2014-03-01T02:51:43Z
dc.date.available 2014-03-01T02:51:43Z
dc.date.issued 2008 en
dc.identifier.issn 18626351 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/35607
dc.subject.other Cmos technologies en
dc.subject.other Downscaling en
dc.subject.other High accuracies en
dc.subject.other High frequencies en
dc.subject.other MOSFET models en
dc.subject.other RF circuit designs en
dc.subject.other RF measurements en
dc.subject.other Scalable compact models en
dc.subject.other Transit frequencies en
dc.subject.other CMOS integrated circuits en
dc.subject.other Heterojunction bipolar transistors en
dc.subject.other Nanotechnology en
dc.subject.other Powders en
dc.subject.other Semiconducting silicon compounds en
dc.subject.other Silicon en
dc.subject.other Technology en
dc.subject.other Nanoelectronics en
dc.title High-frequency scalable compact modelling of Si RF-CMOS technology en
heal.type conferenceItem en
heal.identifier.primary 10.1002/pssc.200780121 en
heal.identifier.secondary http://dx.doi.org/10.1002/pssc.200780121 en
heal.publicationDate 2008 en
heal.abstract The aggressive downscaling of CMOS technologies offers record transit frequencies well above 100 GHz. Efficient RF circuit design, employing such technologies, demands nonlinear, scalable compact models with high accuracy up to high frequencies. EKV3 is an advanced MOSFET model, based on charge sheet theory, that meets such demands. Within this paper, the model is validated against DC and RF measurements up to 30 GHz, for various devices of a modern 180 nm CMOS technology. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA. en
heal.journalName Physica Status Solidi (C) Current Topics in Solid State Physics en
dc.identifier.doi 10.1002/pssc.200780121 en
dc.identifier.volume 5 en
dc.identifier.issue 12 en
dc.identifier.spage 3681 en
dc.identifier.epage 3685 en


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