Voltage dependence of spin transfer torque in magnetic tunnel junctions

Chshiev, M; Theodonis, I; Kalitsov, A; Kioussis, N; Butler, WH

dc.contributor.author	Chshiev, M	en
dc.contributor.author	Theodonis, I	en
dc.contributor.author	Kalitsov, A	en
dc.contributor.author	Kioussis, N	en
dc.contributor.author	Butler, WH	en
dc.date.accessioned	2014-03-01T02:51:51Z
dc.date.available	2014-03-01T02:51:51Z
dc.date.issued	2008	en
dc.identifier.issn	00189464	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35684
dc.subject	Exchange coupling	en
dc.subject	Magnetic tunnel junctions	en
dc.subject	Quantum transport	en
dc.subject	Spin transfer	en
dc.subject	Spin-dependent tunneling	en
dc.subject.other	Applied voltages	en
dc.subject.other	Band parameters	en
dc.subject.other	Charge current	en
dc.subject.other	Evanescent state	en
dc.subject.other	Ferromagnetic electrodes	en
dc.subject.other	Magnetic tunnel junction	en
dc.subject.other	Non-equilibrium green functions	en
dc.subject.other	Quantum transport	en
dc.subject.other	Spin dependent tunneling	en
dc.subject.other	Spin torque	en
dc.subject.other	Spin transfer	en
dc.subject.other	Spin transfer torque	en
dc.subject.other	Theoretical investigations	en
dc.subject.other	Tight binding model	en
dc.subject.other	Voltage dependence	en
dc.subject.other	Zero bias	en
dc.subject.other	Electrodes	en
dc.subject.other	Exchange coupling	en
dc.subject.other	Ferromagnetic materials	en
dc.subject.other	Ferromagnetism	en
dc.subject.other	Magnetic devices	en
dc.subject.other	Quantum chemistry	en
dc.subject.other	Quantum electronics	en
dc.subject.other	Spin dynamics	en
dc.subject.other	Torque	en
dc.subject.other	Tunneling (excavation)	en
dc.subject.other	Tunnel junctions	en
dc.title	Voltage dependence of spin transfer torque in magnetic tunnel junctions	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/TMAG.2008.2002605	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TMAG.2008.2002605	en
heal.publicationDate	2008	en
heal.abstract	Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of nonequilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e., exchange coupling through the barrier between ferromagnetic electrodes is discussed. © 2008 IEEE.	en
heal.journalName	IEEE Transactions on Magnetics	en
dc.identifier.doi	10.1109/TMAG.2008.2002605	en
dc.identifier.volume	44	en
dc.identifier.issue	11 PART 2	en
dc.identifier.spage	2543	en
dc.identifier.epage	2546	en