Current carriers transport in high uniaxially strained silicon

Kolomoets, VV; Baidakov, VV; Fedosov, AV; Gorin, AE; Ermakov, VM; Korbutyak, DV; Liarokapis, E; Gromova, GV; Orasgulyev, B

dc.contributor.author	Kolomoets, VV	en
dc.contributor.author	Baidakov, VV	en
dc.contributor.author	Fedosov, AV	en
dc.contributor.author	Gorin, AE	en
dc.contributor.author	Ermakov, VM	en
dc.contributor.author	Korbutyak, DV	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Gromova, GV	en
dc.contributor.author	Orasgulyev, B	en
dc.date.accessioned	2014-03-01T02:51:58Z
dc.date.available	2014-03-01T02:51:58Z
dc.date.issued	2009	en
dc.identifier.issn	0094243X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35784
dc.subject	Effective mass	en
dc.subject	Tensoresistivity effects	en
dc.subject	Uniaxial strain	en
dc.title	Current carriers transport in high uniaxially strained silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1063/1.3295551	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3295551	en
heal.publicationDate	2009	en
heal.abstract	We present the tensoresistivity effects which demonstrate the pressure-induced increase of the mobility of electrons and holes at certain orientations of uniaxial pressure X with reference to the [100] crystallographic axis. The uniaxially strained channels occur in silicon n-MOS-transistors and p-MOS transistors [1, 2]. Both longitudinal tensoresistivity (TR) and transverse TR investigation in high uniaxially strained n-Si(P) and p-Si(B) are presented. In n-Si the change of the longitudinal TR and transverse TR at X ∥ [100] is determined by both the change of f-transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m∥ (longitudinal TR) and m⊥ (transverse TR). It is shown that the strong anisotropy of longitudinal TR and transverse TR are caused by pressure-induced change of isoenergetic surface shape, i.e. by the change of heavy holes effective mass and its anisotropy. © 2009 American Institute of Physics.	en
heal.journalName	AIP Conference Proceedings	en
dc.identifier.doi	10.1063/1.3295551	en
dc.identifier.volume	1199	en
dc.identifier.spage	55	en
dc.identifier.epage	56	en