Modification of light scattering properties of boron doped zinc oxide grown by Low Pressure Chemical Vapour Deposition using wet chemical etching

Calnan, S; David, C; Neumann, A; Papathanasiou, N; Schlatmann, R; Rech, B

dc.contributor.author	Calnan, S	en
dc.contributor.author	David, C	en
dc.contributor.author	Neumann, A	en
dc.contributor.author	Papathanasiou, N	en
dc.contributor.author	Schlatmann, R	en
dc.contributor.author	Rech, B	en
dc.date.accessioned	2014-03-01T02:52:31Z
dc.date.available	2014-03-01T02:52:31Z
dc.date.issued	2010	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35901
dc.subject	Amorphous Silicon	en
dc.subject	Light Scattering	en
dc.subject	Silicon Solar Cell	en
dc.subject	Solar Cell	en
dc.subject	Surface Morphology	en
dc.subject	Thin Film	en
dc.subject	Zinc Oxide	en
dc.subject	Low Pressure Chemical Vapor Deposited	en
dc.subject	Low Pressure Chemical Vapour Deposition	en
dc.subject	Open Circuit Voltage	en
dc.title	Modification of light scattering properties of boron doped zinc oxide grown by Low Pressure Chemical Vapour Deposition using wet chemical etching	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/PVSC.2010.5614451	en
heal.identifier.secondary	http://dx.doi.org/10.1109/PVSC.2010.5614451	en
heal.publicationDate	2010	en
heal.abstract	The best light scattering properties for ZnO:B films grown by Low Pressure Chemical Vapor Deposition (LPCVD) require low doping in the precursors and films. Such films must be thicker than 2 μm to achieve sheet resistances ≤ 20 Ω/sq, suitable for thin film silicon solar cells. In this study, ZnO:B films, grown by LPCVD with different doping levels, were etched	en
heal.journalName	Photovoltaic Specialists, IEEE Conference	en
dc.identifier.doi	10.1109/PVSC.2010.5614451	en