Photoelectrochemical characterization of polycrystalline CdSe, CdTe and CuInSe2 semiconductor films

Koutsikou, R; Bouroushian, M

dc.contributor.author	Koutsikou, R	en
dc.contributor.author	Bouroushian, M	en
dc.date.accessioned	2014-03-01T02:52:44Z
dc.date.available	2014-03-01T02:52:44Z
dc.date.issued	2010	en
dc.identifier.issn	0094243X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36029
dc.subject	Electrodeposition	en
dc.subject	II-VI and I-III-VI semiconductors	en
dc.subject	Nanocrystalline materials	en
dc.subject	Optical properties of thin films	en
dc.subject	Semiconductor photoelectrochemistry	en
dc.title	Photoelectrochemical characterization of polycrystalline CdSe, CdTe and CuInSe2 semiconductor films	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1063/1.3322591	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.3322591	en
heal.publicationDate	2010	en
heal.abstract	Useful optical parameters of thin semiconducting films can be determined by electrochemical and electrical techniques. This work is an attempt to characterize cathodically electrodeposited binary cadmium chalcogenide (CdSe, CdTe) and ternary Cu-chalcopyrite (CuInSe2) films by photoelectrochemical techniques. Namely, photovoltammetry, photocurrent spectroscopy and onset potential method. Some fundamentals, regarding the estimation of band gap energy and flat band potential values of these semiconductors, are briefly discussed. © 2009 American Institute of Physics.	en
heal.journalName	AIP Conference Proceedings	en
dc.identifier.doi	10.1063/1.3322591	en
dc.identifier.volume	1203	en
dc.identifier.spage	961	en
dc.identifier.epage	966	en