Defect and impurities in Ge-based electronic devices

Tsetseris, L

dc.contributor.author	Tsetseris, L	en
dc.date.accessioned	2014-03-01T02:52:59Z
dc.date.available	2014-03-01T02:52:59Z
dc.date.issued	2011	en
dc.identifier.issn	19385862	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36173
dc.subject.other	Computational studies	en
dc.subject.other	Defects and impurities	en
dc.subject.other	Electronic device	en
dc.subject.other	First-principles calculation	en
dc.subject.other	Gate oxide	en
dc.subject.other	Ge substrates	en
dc.subject.other	Hydrogen impurity	en
dc.subject.other	Impurities in	en
dc.subject.other	Physical mechanism	en
dc.subject.other	Si-Ge alloys	en
dc.subject.other	Calculations	en
dc.subject.other	Cerium alloys	en
dc.subject.other	Defects	en
dc.subject.other	Germanium	en
dc.subject.other	Hydrogen	en
dc.subject.other	Impurities	en
dc.subject.other	Photonics	en
dc.subject.other	Thermoelectric equipment	en
dc.subject.other	Dielectric materials	en
dc.title	Defect and impurities in Ge-based electronic devices	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1149/1.3633019	en
heal.identifier.secondary	http://dx.doi.org/10.1149/1.3633019	en
heal.publicationDate	2011	en
heal.abstract	Further advances in the performance and reliability of Ge-based electronic devices require an understanding of the most prominent types of defects and impurities in these systems. In this respect, computational studies can play an important role for the elucidation of the physical mechanisms that control the stability and dynamics of these defects. Here we will review recent results of first-principles calculations within density-functional theory on Ge-related imperfections in the bulk of various dielectrics and at the boundary between a gate oxide and a Ge substrate. We will also discuss results on the stability of hydrogen impurities and dopant-hydrogen complexes in SiGe alloys. ©The Electrochemical Society.	en
heal.journalName	ECS Transactions	en
dc.identifier.doi	10.1149/1.3633019	en
dc.identifier.volume	41	en
dc.identifier.issue	3	en
dc.identifier.spage	47	en
dc.identifier.epage	52	en