Design of a 1.2-V 60 GHz transceiver in a 90nm CMOS RF technology

Simitsakis, P; Liolis, S; Psyllos, D; Mountrichas, L; Sotiriadis, PP

dc.contributor.author	Simitsakis, P	en
dc.contributor.author	Liolis, S	en
dc.contributor.author	Psyllos, D	en
dc.contributor.author	Mountrichas, L	en
dc.contributor.author	Sotiriadis, PP	en
dc.date.accessioned	2014-03-01T02:53:00Z
dc.date.available	2014-03-01T02:53:00Z
dc.date.issued	2011	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36176
dc.subject.other	60 GHz band	en
dc.subject.other	60-GHz transceivers	en
dc.subject.other	90nm CMOS	en
dc.subject.other	Channel bandwidth	en
dc.subject.other	Gigabit Ethernet	en
dc.subject.other	Power supply	en
dc.subject.other	QPSK modulation	en
dc.subject.other	Wireless transmissions	en
dc.subject.other	Ethernet	en
dc.subject.other	Linear control systems	en
dc.subject.other	Power amplifiers	en
dc.subject.other	Quadrature phase shift keying	en
dc.subject.other	Transceivers	en
dc.title	Design of a 1.2-V 60 GHz transceiver in a 90nm CMOS RF technology	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ICECS.2011.6122283	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ICECS.2011.6122283	en
heal.identifier.secondary	6122283	en
heal.publicationDate	2011	en
heal.abstract	In this paper the design of a high-data-rate transceiver in the 60 GHz band using a QPSK modulation scheme is presented. The channel bandwidth is 1 GHz in order to achieve gigabit Ethernet wireless transmission at 1km distance. The receiver has 66 db of linear controlled gain with a noise figure of 8 dB. The transmitter is capable of delivering -12 dBm of power at the external power amplifier. Both circuits operate under a 1.2 V power supply. © 2011 IEEE.	en
heal.journalName	2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011	en
dc.identifier.doi	10.1109/ICECS.2011.6122283	en
dc.identifier.spage	342	en
dc.identifier.epage	345	en