Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs QW FETs

Tsopelas, AGI; Xanthakis, JP

dc.contributor.author	Tsopelas, AGI	en
dc.contributor.author	Xanthakis, JP	en
dc.date.accessioned	2014-03-01T02:53:30Z
dc.date.available	2014-03-01T02:53:30Z
dc.date.issued	2011	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36369
dc.subject.other	Cap layers	en
dc.subject.other	Fabricated device	en
dc.subject.other	Gate length	en
dc.subject.other	Gate metals	en
dc.subject.other	Gate oxide	en
dc.subject.other	InGaAs quantum wells	en
dc.subject.other	Intensive research	en
dc.subject.other	Subthreshold	en
dc.subject.other	Theoretical calculations	en
dc.subject.other	Aluminum	en
dc.subject.other	Hafnium oxides	en
dc.subject.other	MESFET devices	en
dc.subject.other	Research	en
dc.subject.other	Semiconducting indium	en
dc.subject.other	Silicon	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Tungsten	en
dc.subject.other	Current voltage characteristics	en
dc.title	Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs QW FETs	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2011.6135195	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2011.6135195	en
heal.identifier.secondary	6135195	en
heal.publicationDate	2011	en
heal.abstract	During the last 2-3 years there has been an intensive research on InGaAs quantum well channels [1-4] as a possible alternative to the traditional Si-SiO2 FETs. Both Al2O3 [1-3] and HfO2 [4] are used as gate oxides. The fabricated devices with available current-voltage characteristics in the literature are of long gates. Typically the gate lengths Lg vary from 200 nm to 10 m. These devices however have to be scaled to the 20nm regime if they are to replace the Si-SiO2 system. A theoretical calculation tool that would show the trend from the micrometer values of Lg to the tenths of nm values would be valuable. In this paper we examine theoretically the Al2O3/InGaAs system with a variable gate length Lg. The gate metal is tungsten (W) as employed in the fabricated devices. We will see that it is a very good choice for having the threshold value VT near zero volts. Furthermore, in accordance with experiment, a cap layer of InAlAs-which also acts as a supply layer-is used so that finally our system consists of the layers: W/Al2O3/AlGaAs/InGaAs. This is shown in figure 1 together with the relevant lengths. © 2011 IEEE.	en
heal.journalName	2011 International Semiconductor Device Research Symposium, ISDRS 2011	en
dc.identifier.doi	10.1109/ISDRS.2011.6135195	en