Modeling of charge-trapping non-volatile-memories based on HfO2

Verrelli, E; Tsoukalas, D

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:53:55Z
dc.date.available	2014-03-01T02:53:55Z
dc.date.issued	2012	en
dc.identifier.issn	01679317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36486
dc.subject	Charge trap memory	en
dc.subject	High-k	en
dc.subject	Modeling	en
dc.subject	Oxide charge	en
dc.subject	Simulation	en
dc.subject	Trap distribution	en
dc.subject	Trap layer	en
dc.subject	Tunneling	en
dc.subject.other	Charge trap	en
dc.subject.other	High-k	en
dc.subject.other	Oxide charge	en
dc.subject.other	Simulation	en
dc.subject.other	Trap distributions	en
dc.subject.other	Trap layers	en
dc.subject.other	Electron tunneling	en
dc.subject.other	Hafnium	en
dc.subject.other	Models	en
dc.subject.other	Silica	en
dc.subject.other	Hafnium oxides	en
dc.title	Modeling of charge-trapping non-volatile-memories based on HfO2	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2011.04.020	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2011.04.020	en
heal.publicationDate	2012	en
heal.abstract	In the present work we present experimental results and the first simulation results concerning the charge-trapping properties of devices based on HfO2, MNOS-like, for non-volatile-memory applications. Hafnium oxide sputtered on top of a silicon dioxide tunneling layer represents the storage layer for the charges injected/extracted from the p-type silicon substrate. Although no blocking oxide on top of the structure has been considered in this study, electrical characterization shows large hysteresis at voltages lower than 12 V. Insight to the physics underlying the behavior of such a device is given using a simulator presented in this work. The simulation of the programming characteristics will be presented and compared with those obtained from the fabricated devices giving insight to the properties of the traps involved. Good agreement is found between measured and simulated data. © 2011 Elsevier B.V. All rights reserved.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2011.04.020	en
dc.identifier.volume	90	en
dc.identifier.spage	23	en
dc.identifier.epage	25	en