Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs Quantum Well (QW) FET's

Tsopelas, I; Gili, A; Xanthakis, JP

dc.contributor.author	Tsopelas, I	en
dc.contributor.author	Gili, A	en
dc.contributor.author	Xanthakis, JP	en
dc.date.accessioned	2014-03-01T02:54:03Z
dc.date.available	2014-03-01T02:54:03Z
dc.date.issued	2012	en
dc.identifier.issn	10139826	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36560
dc.subject	InGaAs channel	en
dc.subject	Quantum well FET	en
dc.subject	Schroedinger - Poisson model	en
dc.subject.other	Continuity equations	en
dc.subject.other	Fast switching	en
dc.subject.other	Gate-length	en
dc.subject.other	InGaAs channel	en
dc.subject.other	MOS-FET	en
dc.subject.other	Poisson model	en
dc.subject.other	Quantum well	en
dc.subject.other	Quantum well FET	en
dc.subject.other	Schottky barriers	en
dc.subject.other	Subthreshold	en
dc.subject.other	Subthreshold slope	en
dc.subject.other	MESFET devices	en
dc.subject.other	Poisson equation	en
dc.subject.other	Schottky barrier diodes	en
dc.subject.other	Schrodinger equation	en
dc.subject.other	Semiconductor quantum wells	en
dc.subject.other	Sensors	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Threshold voltage	en
dc.title	Threshold voltage and sub-threshold slope variation with gate-length in Al2O3/InAlAs/InGaAs Quantum Well (QW) FET's	en
heal.type	conferenceItem	en
heal.identifier.primary	10.4028/www.scientific.net/KEM.495.112	en
heal.identifier.secondary	http://dx.doi.org/10.4028/www.scientific.net/KEM.495.112	en
heal.publicationDate	2012	en
heal.abstract	We have theoretically examined the scaling of the Al2O3/InAlAs/InGaAs QW FET one of the proposed III-V channel MOSFET's designed to replace the conventional SiO2/Si structures. To accomplish this we have used a Schroedinger - Poisson - Continuity equation model that is fully 2- dimentional ie all equations are solved along and perpendicular to the channel. We have found out that for the threshold voltage VT to be around zero volts a Schottky barrier φB of 3.5 - 4.0eV is necessary. Both Cu or W will suffice. for this. The VT value moves by 0.7 as the device is scaled from 65 nm gate length Lg to 25nm. Furthermore, as the Lg is scaled to the desired 20nm value the subthreshold slope SS increases from 90meV/dec to about 170meV/dec guaranteeing fast switching. © (2012) Trans Tech Publications.	en
heal.journalName	Key Engineering Materials	en
dc.identifier.doi	10.4028/www.scientific.net/KEM.495.112	en
dc.identifier.volume	495	en
dc.identifier.spage	112	en
dc.identifier.epage	115	en