Electrical characterization and degradation kinetics assessment of lateral Ge-on-Si photodetectors

Poumpouridis, Nikolaos; Πουμπουρίδης, Νικόλαος

dc.contributor.author	Poumpouridis, Nikolaos	en
dc.contributor.author	Πουμπουρίδης, Νικόλαος	el
dc.date.accessioned	2024-06-05T09:21:55Z
dc.date.available	2024-06-05T09:21:55Z
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/59644
dc.identifier.uri	http://dx.doi.org/10.26240/heal.ntua.27340
dc.description	Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ελλάδα	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/gr/	*
dc.subject	Φωτονική Πυριτίου	el
dc.subject	Φωτοανιχνευτές	el
dc.subject	Υποβάθμιση ρεύματος διαρροής	el
dc.subject	Ατέλειες	el
dc.subject	Θερμοί φορείς	el
dc.subject	Silicon photonics	en
dc.subject	Defects	en
dc.subject	Dark current degradation	en
dc.subject	Hot carriers	en
dc.subject	Ge-on-Si photodetectors	en
dc.title	Electrical characterization and degradation kinetics assessment of lateral Ge-on-Si photodetectors	en
heal.type	masterThesis
heal.classification	Reliability Physics	en
heal.language	el
heal.language	en
heal.access	campus
heal.recordProvider	ntua	el
heal.publicationDate	2024-02-21
heal.abstract	In recent years, escalating demands for higher bandwidth in data communications and telecommunications applications, have exceeded the capabilities of traditional electronic processors, leading to a departure from the constraints of Moore’s law. This circumstance has prompted significant strides in Silicon photonics technology. The utilization of light as the medium for data transport, replacing electrons, can enhance the speed and stability of the data communications systems, as light particles have zero rest mass and zero charge. These properties of light in combination with the use of the mature complementary metal-oxide semiconductor (CMOS) technology, could result in a low-cost yet higher bandwidth electronic products. To facilitate this significant shift in electronics, high-performance and reliable photonic integrated circuit (PIC) components such as Germanium photodetectors and Germanium electro-absorption modulators need to be developed. Since long term reliability in photodiodes remains a challenge, an in depth investigation of the underlying physics of degradation is necessary. One crucial property for optimal photodetector performance is their dark current. Maintaining a low dark current during photodetector operation is essential, as failure to do so can lead to a decrease in its photodetection sensitivity and an increase in power consumption. While prior studies have provided insights into the impact of dislocation defects at the Ge/Si interface and electrically active traps at Ge/shallow trench isolation (STI) interfaces, on dark current, a comprehensive understanding of the dynamic evolution during operation remains elusive. This study embarks on an in-depth exploration of the degradation and recovery kinetics of imec’s Germanium-on-Silicon (Ge-on-Si) lateral photodetectors and electro-absorption modulators. Two types of lateral photdetectors, with different doping conditions underwent stress testing in various conditions, yielding comparative results. The investigation aims to elucidate the significance of defects around specific interfaces, the presence of hot carriers, and the impact of the depletion region width. This nuanced analysis contributes to a more precise understanding of the physics governing the performance of these semiconductor devices.	en
heal.advisorName	Tsoukalas, Dimitris	en
heal.advisorName	Musibau, Solomon	en
heal.advisorName	Tsiara, Artemisia	en
heal.advisorName	Franco, Jacopo	en
heal.committeeMemberName	Raptis, Yannis	en
heal.committeeMemberName	Kyritsis, Apostolos	en
heal.committeeMemberName	Tsoukalas, Dimitris	en
heal.academicPublisher	other	el
heal.academicPublisherID	ntua
heal.numberOfPages	92 σ.	el
heal.fullTextAvailability	false