Ionic photoelasticity of GaAs

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:06:10Z
dc.date.available	2014-03-01T01:06:10Z
dc.date.issued	1983	en
dc.identifier.issn	0022-3719	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9212
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Ionic photoelasticity of GaAs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3719/16/17/017	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3719/16/17/017	en
heal.identifier.secondary	017	en
heal.language	English	en
heal.publicationDate	1983	en
heal.abstract	The dispersion of photoelastic and elasto-optical coefficients of GaAs in the infrared region of the spectrum is calculated. The basic physical parameters entering the calculation correspond to the strain derivatives of the transverse phonon effective charge and of the transverse and longitudinal optical phonon frequencies. They are all deduced from existing piezospectroscopic data. The calculation extends to other physical parameters such as the pressure derivatives of the effective charge and index of refraction. The dispersion of the integrated intensity for ionic Brillouin scattering is also computed. Both the linewidth of the transverse optical phonon and its strain dependence are taken into account explicitly. They are shown to have a substantial effect on the profile of the dispersions.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics C: Solid State Physics	en
dc.identifier.doi	10.1088/0022-3719/16/17/017	en
dc.identifier.isi	ISI:A1983QV48800017	en
dc.identifier.volume	16	en
dc.identifier.issue	17	en
dc.identifier.spage	3329	en
dc.identifier.epage	3348	en