Dependence of Raman frequencies and scattering intensities on pressure in GaSb, InAs, and InSb semiconductors

Aoki, K; Anastassakis, E; Cardona, M

dc.contributor.author	Aoki, K	en
dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Cardona, M	en
dc.date.accessioned	2014-03-01T01:06:15Z
dc.date.available	2014-03-01T01:06:15Z
dc.date.issued	1984	en
dc.identifier.issn	01631829	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9268
dc.title	Dependence of Raman frequencies and scattering intensities on pressure in GaSb, InAs, and InSb semiconductors	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.30.681	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.30.681	en
heal.publicationDate	1984	en
heal.abstract	The first-order Raman scattering by TO and LO phonons has been measured in GaSb, InAs, and InSb under hydrostatic pressures up to their phase transitions. The Raman frequencies increase nearly linearly while the LO-TO splitting decreases with increasing pressure. The scattering intensities display strong enhancement as the E1 band gaps approach the laser frequencies with increasing pressure. The measured volume dependence of the Raman frequencies and the transverse effective charges is interpreted by means of pseudopotential calculations. The resonance behavior is discussed in terms of resonant Raman scattering near the E1 gaps. © 1984 The American Physical Society.	en
heal.journalName	Physical Review B	en
dc.identifier.doi	10.1103/PhysRevB.30.681	en
dc.identifier.volume	30	en
dc.identifier.issue	2	en
dc.identifier.spage	681	en
dc.identifier.epage	687	en