Light scattering of InSb at high temperatures

Liarokapis, E; Anastassakis, E

dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:06:17Z
dc.date.available	2014-03-01T01:06:17Z
dc.date.issued	1984	en
dc.identifier.issn	0163-1829	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/9286
dc.subject	High Temperature	en
dc.subject	Light Scattering	en
dc.subject.classification	Physics, Condensed Matter	en
dc.title	Light scattering of InSb at high temperatures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.30.2270	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.30.2270	en
heal.language	English	en
heal.publicationDate	1984	en
heal.abstract	Raman scattering measurements in the small-gap semiconductor InSb show that the splitting between longitudinal and transverse long-wavelength optical phonons is drastically reduced and eventually disappears at temperatures approaching the melting point. These observations are attributed to screening of the long-range forces by free carriers, whose presence dominates as the fundamental energy gap diminishes near the melting point, and to contributions due to momentum nonconservation and lattice anharmonicity. Preliminary results on other III-V semiconductors are also discussed. © 1984 The American Physical Society.	en
heal.publisher	AMERICAN PHYSICAL SOC	en
heal.journalName	Physical Review B	en
dc.identifier.doi	10.1103/PhysRevB.30.2270	en
dc.identifier.isi	ISI:A1984TE51300091	en
dc.identifier.volume	30	en
dc.identifier.issue	4	en
dc.identifier.spage	2270	en
dc.identifier.epage	2272	en